| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a polysilicon fuse which can be broken in a lower current and a lower voltage, and a method of manufacturing the device. SOLUTION: This semiconductor device is provided with a resistor 1, which has a region (that is, the part of the small sectional area) 2 of a narrow width and first and second regions (the parts of the large sectional areas) 1A and 1B and consists of a polysilicon film, and first and second electrodes 3A and 3B, which are at least two electrode regions (the first and second electrodes) 3A and 3B respectively formed on the regions 1A and 1B, are used for connecting wirings with the registor 1, and are arranged on both sides of the region 2 of narrow width. The device is provided with a polysilicon fuse 5, formed in such a way that the electrodes 3A and 3B are separated by more than a prescribed distance from the region 2 of the narrow width. As a result, the fuse 5 can be broken in a lower current and a lower voltage.
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