| 摘要 |
PROBLEM TO BE SOLVED: To provide a connection structure of a minute contact hole having good heat resistance and stable connection characteristics and suitable for a manufacturing step for a stack-type DRAM with a highly dielectric film. SOLUTION: A contact hole 5 to be connected with silicon is filled with tungsten. A WN film as barrier metal with stoichiometric stability is formed between the tungsten and the connection face of the silicon, and a WSi2 film or a TiSi2 film as barrier metal is formed between the WN film and the silicon so that diffusion of tungsten from a metallic filling material 7 is inhibited because of tungsten contained commonly in W and barrier metal WN of the metallic filling material 7, and at the same time the diffusion of silicon into the metallic filling material 7 is prevented because of silicon contained in the barrier metal WSi2 film or the TiSi2 film. As a result, a highly reliable connection structure durable at high-temperature treatment of 800 deg.C can be obtained and used in a manufacturing step for a stack-type DRAM having a highly dielectric film and capable of crystallization at high-temperature treatment.
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