| 摘要 |
A non-intrusive method for in-situ measurement of etching chamber and optionally etch rate inside a plasma etching chamber is disclosed for use in the fabrication of semiconductor devices. The method includes the step of selecting at least one plasma species as a probe which can be F, CF2, or CO, then measuring the emission intensity at a predetermined wavelength corresponding to the plasma species so selected. Preferably, the emission intensity is measured at wavelength of 686 nm (corresponding to the transition of F from 3s3P3 to 3p4P3), 269 or 239 nm, corresponding to the transitions from A1B1(v'=0) to X1A1(v''=0) and from A1B1(v'=9) to X1A1(v''=0) for CF2, respectively, and 693 or 505 nm, corresponding to the transitions from d3+529 (v'=2) to a3+529 (v''=2) and from d3+529 (v'=7) to a3+529 (v''=2) for CO, respectively. By properly selecting the measurement site, etching rate and etching pressure can be obtained simultaneously.
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