| 摘要 |
PROBLEM TO BE SOLVED: To enable securing read-out signal voltage being more large by applying voltage as higher as possible to a ferroelectric capacitor and increasing residual polarization in a ferroelectric memory. SOLUTION: Voltage Vpl of a selection plate line PL is set higher than a power source voltage Vcc to obtain higher read signal voltage. In such a case, Vcc is applied to a ferroelectric capacitor fro which inverting write is performed and -Vpl is applied to a ferroelectric capacitor for which non- inverting write is performed. In order to realize such operation, a plate line driving circuit PLD and a VPl generating circuit VPLG which drive the plate line PL with higher voltage than power source voltage are provided. This VPl can be generated by an internal boosting power source circuit of a charge pumping circuit and the like or a self-boosting circuit.
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