Semiconductor device having a conductor pattern side face provided with a separate conductive sidewall

摘要

A semiconductor device has a conductive contact buried in a contact hole formed in an insulation film. A conductor pattern is formed on the insulation film and a separate conductive sidewall is formed on a side face of the conductor pattern over or next to the contact buried in the contact hole. The separate conductive sidewall extends on the side face above a top face of the insulation film in a direction away from the top face of the insulation film. This permits the conductor pattern to either be directly in contact with the conductive contact in the contact hole and/or to make good electrical contact with the contact in the contact hole via the separate conductive sidewall.