发明名称 |
Method of forming an integrated circuit having spacer after shallow trench fill and integrated circuit formed thereby |
摘要 |
A method of forming an isolation region in an integrated circuit and an integrated circuit formed thereby. A method preferably includes forming at least one trench in a semiconductor substrate, forming an insulation layer of material in the at least one trench and on peripheral regions of the at least one trench of the semiconductor substrate, forming a sacrificial layer of material on the insulation layer having a different polishing rate than the insulation layer, and polishing the layer having the different polishing rate and portions of the insulation layer so that the sacrificial layer having the different polishing rate and portions of the insulation layer are removed, so that other portions of the insulation layer remain in the at least one trench of the substrate, and so that the upper surface of the at least one trench and the peripheral regions thereof in combination provide a substantially planar surface.
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申请公布号 |
US6022788(A) |
申请公布日期 |
2000.02.08 |
申请号 |
US19970996457 |
申请日期 |
1997.12.23 |
申请人 |
STMICROELECTRONICS, INC. |
发明人 |
GANDY, TODD;SAMPSON, RONALD;HODGES, ROBERT |
分类号 |
H01L21/3105;H01L21/762;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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