SEMICONDUCTOR DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To realize a small-size device and to obtain high definition and high resolution by facilitating crystallization in the active layers of plural pixel TFTs and plural TFTs by catalyst elements and selectively gettering the catalyst elements by gettering elements. SOLUTION: A silicon oxide film 302 is formed on a glass substrate 301. Then, an amorphous silicon film 303 is formed thereon and the surface of the amorphous silicon film 303 is irradiated with UV rays to form a thin oxide layer. Then, Ni acetate 304 in a liquid phase is applied on the surface of the amorphous silicon film 303 and heat-treated in a nitrogen atmosphere to crystallize the amorphous silicon film 303. During the heat treatment, Ni elements accelerates the crystallization of the silicon film 303 while moving in the silicon film. Then, a process to remove nickel in the film is carried out and there after, the film is thermally annealed in a nitrogen atmosphere to getter the nickel elements. In this case, phosphorus acts as a gettering element.