| 摘要 |
PROBLEM TO BE SOLVED: To improve the margin of photolithography, when a trench element isolation region is formed through a photolithography. SOLUTION: An element isolation region is formed through a method, where trenches 12 that are to serve as element isolation regions are provided to a semiconductor substrate 11, and only a resist 14' formed on the trench 12 larger in width than a prescribed value is left unremoved. An insulating film 13 is removed by etching where the unremoved resist 14' is used as an etching mask, and the left insulating film is removed by chemical-mechanical polishing, whereby a trench filled up with an insulating film is formed.
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