PRODUCTION METHOD OF THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a production method of a positive stagger-type thin film transistor which can form a gate insulating film having good dielectric strength on an active layer composed of a polysilicon thin film by leveling the surface of the polysilicon thin film featuring high mobility of a carrier. SOLUTION: The production method of a thin film transistor consists of the following processes: a process wherein an amorphous silicon thin film acting as an insulating film is formed on a glass substrate 11; a process wherein a polysilicon thin film 13 having projections 14 is formed on the surface of the amorphous silicon thin film by poly-crystallization through irradiation of the amorphous thin film with energy beams; and a process wherein the surface of the polysilicon thin film 13 is leveled by removal of the projections 14 on the surface of the polysilicon thin film 13 by chemical mechanical polishing with the use of an abrasive slurry containing abrasive grains.