发明名称 |
Strain-based control of crystal anisotropy for perovskite oxides on semiconductor-based material |
摘要 |
A crystalline structure and a semiconductor device includes a substrate of a semiconductor-based material and a thin film of an anisotropic crystalline material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries are influenced by either a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface.
|
申请公布号 |
US6023082(A) |
申请公布日期 |
2000.02.08 |
申请号 |
US19980126526 |
申请日期 |
1998.07.30 |
申请人 |
LOCKHEED MARTIN ENERGY RESEARCH CORPORATION |
发明人 |
MCKEE, RODNEY ALLEN;WALKER, FREDERICK JOSEPH |
分类号 |
C30B23/02;C30B25/02;C30B25/18;G02B6/12;G02F1/03;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L29/51;H01L29/78;(IPC1-7):H01L29/78;H01L29/04 |
主分类号 |
C30B23/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|