发明名称 Integrated circuit device having a memory array with segmented bit lines and method of operation
摘要 An integrated circuit device having a memory array (50) with segmented bit lines and a method of operation are disclosed. A sub array (52) of the memory array (50) can be operated as a multiple port sub array. A bit line of the sub array (52) is separated into bit line segments by disconnecting the bit line segments (54) from one another. A first bank of sense amplifiers (58) is connected to a first bit line segment (54) of the sub array (52), and a second bank of sense amplifiers (58) is connected to a second bit line segment (54) of the sub array (52). A first operation is performed to the first bit line segment (54) using the first bank of sense amplifiers (58), and a second operation is concurrently performed to the second bit line segment (54) using the second bank of sense amplifiers (58).
申请公布号 US6023428(A) 申请公布日期 2000.02.08
申请号 US19980123591 申请日期 1998.07.28
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 TRAN, HIEP VAN
分类号 G11C7/10;G11C7/18;G11C11/4097;(IPC1-7):G11C16/04 主分类号 G11C7/10
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