| 摘要 |
Disclosed is a field effect transistor amplifier using a field effect transistor as an amplification device, including a coaxial dielectric resonance device inserted between the input terminal of the amplifier and the input terminal of the amplification device and having a .lambda./2 electrical length and a characteristic impedance lower than the input-side impedance from the input terminal of the amplifier to the input terminal of the amplification device.
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