| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method capable of controlling the final heat treating step of a diffused silicon wafer, at the same time controlling the resistivity of the silicon wafer also applying the same for discriminating the element characteristics. SOLUTION: In this manufacturing method, the resistivity of a wafer is controlled by cooling down the temperature lowering rate of a heat treatment furnace at the rate of 7 deg.C/min-13 deg.C/min and at the first selective temperature, i.e., when 680 deg.C-720 deg.C is reached, a wafer is taken out in the atmosphere at room temperature, at a rate of 8 cm/min-12 cm/min. Alternatively, the wafer is taken out in the atmosphere at room temperature at the second time selective temperature, i.e., when 130 deg.C-170 deg.C is reached, the wafer is taken out in the atmosphere at room temperature at the rate of 8 cm/min-12 cm/min.
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