| 摘要 |
PROBLEM TO BE SOLVED: To provide a wet processing technique in the cleaning and drying process of a semiconductor substrate wafer easy of drain disposal, by suppressing the cohesion of foreign matter or impurities on the main surface of a semiconductor substrate wafer. SOLUTION: The surface of a semiconductor substrate wafer 100 is washed within a processing container 10c, and then the semiconductor substrate wafer 100 after washing is pulled up in atmosphere of mixed gas 23 between N2 and H2O. Then, in condition that the processing container 10c is shut off with a shutter 10h, the water at the surface of the semiconductor substrate wafer 100 is washed off by the steam of chemicals for drying in high concentration, for example, IPA steam 25.
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