| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin valve type thin-film element which makes it possible to obtain good symmetry while maintaining a resistance change rate higher than the resistance change rate of a single spin valve type thin-film element. SOLUTION: A nonmagnetic conductive layer (upper) 22 is formed to a film thickness larger than the film thickness of a nonmagnetic conductive layer (lower) 21, thereby, a free magnetic layer 20 is formed to have a structure asymmetrical in the upper and lower parts thereof. As a result, a difference in intensity occurs between the sense current magnetic field Is1 generated from the lower side of the free magnetic layer 20 and the sense current magnetic field Is2 generated from the upper side of the free magnetic layer 20. The sense current magnetic field Is1, which may be obtd. by the vector sum of the sense current magnetic fields Is1, Is2, can be utilized in order to make the asymmetry 0%. The asymmetry can be made 0% by adequately regulating the sense current quantity and the direction where the sense current is passed.
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