| 摘要 |
PROBLEM TO BE SOLVED: To suppress the dispersion of a work function of a gate electrode by forming at least a region of specified thickness at the bottom of the gate electrode from a metal or metal compd. having arranged orientation faces. SOLUTION: In the semiconductor device having a field effect transistor made of a metal oxide at least a region of specified thickness at the bottom of a gate electrode is formed from a metal or metal compd. having arranged orientation faces, the metal or metal compd. having arranged orientation faces is any metal of Al, Ti, W, Ta or Mo, or alloy of these metals, etc. When the gate electrode has a laminate structure, Al, Ag, Au or alloy of these metals is pref. used for an upper metal film. The work function of the gate electrode metal having a direct influence on the threshold value of a transistor is in a range of about 1 nm or less, and hence it will suffice that at least a region of specified thickness (1 nm or more) at the bottom of the gate electrode is formed from a metal or metal compd. having arranged orientation faces.
|
