| 摘要 |
A thin film transistor and its fabrication method are disclosed wherein the thin film transistor includes a semiconductor substrate, an active layer formed on an upper surface of the semiconductor substrate, a membrane layer formed on a portion of the active layer and defining an offset region in the active layer, a gate insulation layer formed on portions of the membrane layer and the active layer, a gate electrode formed on a portion of the gate insulation layer, and a source region and a drain region formed in the active layer.
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