| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can be enhanced in degree of integration and operational speed and a manufacturing method thereof. SOLUTION: A semiconductor device is equipped with an insulating film 24 formed on a base substrate 10, conductor plugs 32 embedded in the insulating film 24 and connected to the base substrate 10, a wiring 38 formed on the insulating film 24 and the conductor plug 32 and connected to the conductor plugs 32, sidewall spacers 42 formed on the side faces of the wiring 38, and a stopper film 40 formed between the insulating film 24 and the sidewall spacer 42.
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