| 摘要 |
PROBLEM TO BE SOLVED: To enable the actual temperature of a substrate to be measured and corrected in a short time, by a method wherein a temperature difference between the set temperature of a heating source obtained from a thin film growth speed in a reaction rate determining temperature region, and the actual temperature of the substrate is added to the set temperature of the heating source at the growth of a thin film in a feed rate determining temperature region. SOLUTION: A test substrate where ions are implanted is thermally treated at various set temperature for a certain time by the use of a thermal treatment device of already-known temperature characteristics to form a second calibration curve which represents a correlation between a sheet resistance and the actual temperature of the substrate (S1). A temperature difference T5-T4 is obtained on the basis of a sheet resistance R that is obtained by the use of a first thin film growth device whose temperature characteristic are unknown at a set temperature T4 of heating source, where T5 denotes the actual temperature of the substrate (S2). The temperature characteristics of the first thin film growth device are grasped (S3). A thin film is grown for a certain time to obtain a straight line that indicates a correlation between a growth rate and the set temperature of a heat source (S4). The set temperature is converted to the actual temperature of a substrate by moving a y segment of the straight line by T5-T4 (S5). A temperature difference T2-T1 is obtained by the use of the second thin film growth device, wherein T2 denotes a certain set temperature, and T1 denotes the actual temperature of a substrate that is obtained on the growth rate of a thin film, and the temperature difference T2-T1 is added to a set temperature T3 (S6 and S7).
|
