发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory which can select a memory mat being able to reduce current consumption at the time of burn-in test. SOLUTION: This semiconductor memory is provided with a memory cell array divided into plural memory mats, a memory mat selecting circuit 71 selecting a memory mat to be activated, and a burn-in test mode detecting circuit 76 generating a burn-in test mode detecting signal BI being made an active state when a burn-in test is performed. The memory mat selecting circuit 71 performs selecting operation so that the number of memory mats activated at the time performing a burn-in test is less than the number of memory mats activated at normal operation in accordance with the signal BI.
申请公布号 JP2000040395(A) 申请公布日期 2000.02.08
申请号 JP19980205051 申请日期 1998.07.21
申请人 MITSUBISHI ELECTRIC CORP 发明人 SAGO YOSHINORI
分类号 G01R31/28;G11C29/00;G11C29/06;(IPC1-7):G11C29/00 主分类号 G01R31/28
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