METHOD OF FORMING METAL LINE BY DUAL DAMASCENE PROCESS USING PHOTO SENSITIVE POLYMER

摘要

PURPOSE: A method of forming metal line is provided to minimize the unwanted capacitance between the metal lines. CONSTITUTION: The method of forming metal line comprises the steps of forming first inter layer dielectric layer on wafer having conduction layer, forming photo sensitive polymer pattern including first aperture having first width and revealing the upper surface of the first inter layer dielectric layer, forming second inter layer dielectric layer on the polymer pattern and on the revealed first inter layer dielectric layer, forming mask pattern including second aperture having second width wider than the first width and revealing the second inter layer dielectric layer at the position corresponding to the first aperture on the second inter layer dielectric layer, forming metal line by dry etching the second inter layer dielectric layer with the mask pattern as etching mask, forming via hole by dry etching the first inter layer dielectric layer with the polymer pattern as etching mask.