METHOD OF FABRICATING METAL OXIDE SLURRY FOR SEMICONDUCTOR DEVICE CMP

摘要

PURPOSE: The method is to fabricate a metal oxide slurry for Chemical Mechanical Polishing(CMP) of a semiconductor device which does not include a giant particle over 1 micrometer in diameter. CONSTITUTION: The metal oxide slurry minimizes and suppresses the generation of the giant particle (over 1 micrometer in diameter), which is the main cause generating micro-scratch, by maintaining the pressure in a dispersion chamber(3) uniformly by using two intensifier pumps(2, 2'), in the method of dispersing the fluid by accelerating in high pressure. By the method, a high fineness metal oxide slurry can be obtained which hardly includes the giant particle over 1 micrometer in diameter generating micro-scratch on the polished surface and whose particle distribution is narrow and uniform.