METAL WIRING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming metal wiring is provided to reduce contact resistance and improve characteristics of a barrier metal layer. CONSTITUTION: The method comprises the steps of forming an insulating layer on a semiconductor substrate having a conductive layer pattern containing silicon; etching the insulating layer down to a surface of the conductive layer pattern to form a contact hole; forming a first metal layer on a surface of the contact hole and the insulating layer, wherein the first metal layer is substantially thick; applying a thermal process to a substrate of a resultant structure to form a metal-silicide layer on a surface of the conductive pattern in the contact hole and a second metal layer on a surface of the first metal layer.