FABRICATING METHOD OF EEPROM

摘要

PURPOSE: A method of fabricating an EEPROM(electrically erasable and programmable read only memory) is provided to prevent a tinning phenomenon by forming a lower voltage gate oxide layer using a wet etching process. CONSTITUTION: The method comprises the steps of nitrifying a semiconductor substrate in which a high voltage gate insulating layer and a tunnel insulating layer are formed; sequentially forming a floating gate electrode and an insulating layer on an overall surface of the semiconductor substrate, wherein the insulating layer is composed of multiple layers; sequentially etching the insulating layer, the floating gate electrode layer, and the high voltage gate insulating layer down to a top surface of the semiconductor substrate of a low voltage region using a mask exposing an only low voltage region; forming a low voltage gate insulating layer on the semiconductor substrate of the low voltage region using a wet etching process; and forming a control gate electrode layer on an overall surface of the semiconductor substrate.