METHOD OF FORMING UPPER ELECTRODE OF CAPACITOR FOR SEMICONDUCTOR BY ATOMIC LAYER DEPOSITION

摘要

PURPOSE: A method of forming a capacitor is provided to prevent an increase of leakage currents occurred by lack of oxygen. CONSTITUTION: The method comprises the steps of; loading a semiconductor substrate, having a dielectric film formed with high dielectric material containing oxygen, in a process chamber; delivering a first source gas containing oxygen in the chamber; purging the first gas; delivering a second source gas containing titanium in the chamber; reacting the second gas with the first gas; purging the second gas; delivering a third source gas containing nitrogen in the chamber; reacting the third gas with the first and second gas adsorbed on the substrate, forming a titaniumoxynitride film on the dielectric film; purging the third gas; delivering the second gas in the chamber; purging the second gas; delivering the third gas in the chamber; and reacting the third gas with the second gas absorbed on the titaniumoxynitride film, forming a titaniumnitride film.