FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of fabricating a semiconductor device is provided to prevent etching damage in a contact etching process by secure a sufficient margin between a gate electrode and a contact hole for a storage electrode. CONSTITUTION: The method comprises the steps of forming a gate electrode on a semiconductor substrate; forming spacers on both sidewalls of the gate electrode; forming a source/drain region in the semiconductor substrate of both edges of the spacers using a high-concentrated impurity ion implanting process; removing the spacers of both sides of the gate electrode; forming a lightly doped drain region overlapped with the source/drain region in the semiconductor substrate using a low-concentrated impurity ion implanting process; and forming an interlayer insulating film on an overall surface of the above resultant and selectively etching the interlayer insulating film to expose a predetermined portion of the semiconductor substrate of the source/drain region, wherein a contact hole for a storage electrode is formed on the other end thereof.