发明名称 DRY ETCHING REACTION END POINT DETECTING SYSTEM FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A dry etching reaction end point detecting system is provided to exactly detect an end point of a dry etching process by overcoming strength thindown of a light transmitting a view port. CONSTITUTION: The system comprises a view port, coupled to a chamber of a dry etching apparatus, viewing light of an intrinsic wavelength generated from a dry etching reaction; a detector detecting the light viewed through the view port; an optic fiber cable transferring the viewed light from the view port to the detector; a bracket supporting the optic fiber cable to arrange a light receiving surface of the optical fiber cable to the view port; and a concentrator, mounted in the bracket, concentrating the viewed light on the light receiving surface.
申请公布号 KR20000008369(A) 申请公布日期 2000.02.07
申请号 KR19980028157 申请日期 1998.07.13
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 KIM, YEONG U
分类号 H01L21/00;(IPC1-7):H01L21/00 主分类号 H01L21/00
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