CAPACITOR OF SEMICONDUCTOR DEVICES AND METHOD THEREOF

摘要

PURPOSE: A capacitor and fabrication method thereof are provided to prevent a chemical reaction and diffusion of impurities between a dielectric layer and a lower electrode by using ALD(atomic layer deposition). CONSTITUTION: The capacitor structure comprises a lower electrode(120) to contact an active region of a semiconductor substrate(100); a dielectric layer(140) having a high dielectric constant formed on the lower electrode using an ALD; an upper electrode(150) formed on the dielectric layer(140), wherein a plurality of inter-layer insulator(130) are formed between the lower electrode(120) and the dielectric layer(140) so as to restrain the chemical reaction and impurity diffusion. The inter-layer insulators(130) composed of a silicon nitride(131) and a silicon oxide(132).