发明名称 |
CLEANING METHOD OF A PZT THIN FILM |
摘要 |
PURPOSE: A method for cleaning a PZT thin film is provided to exactly remove only damaged surface of the PZT thin film by slowing an etching speed depend on concentration of HF solution. CONSTITUTION: The method comprises the step of etching a surface of a PZT thin film(2) by dipping the PZT thin film(2) into an etching solution composed of BOE(buffered oxide etchant) such as HF and acetic acid. The acetic acid used for removing Pb components and the HF used for removing Ti and Zr components. To be slow etching speed (that is, increasing cleaning effect instead of etching effect), the etching solution further comprises an alcohol. The alcohol is a member selected from the group consisting of methanol, ethanol or propanol.
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申请公布号 |
KR20000007792(A) |
申请公布日期 |
2000.02.07 |
申请号 |
KR19980027305 |
申请日期 |
1998.07.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JOON GI;KIM, CHANG JEONG |
分类号 |
H01L21/308;C09K13/08;C23F1/30;H01L21/02;H01L21/304;H01L21/311;H01L21/316;H01L21/3213;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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