发明名称 CLEANING METHOD OF A PZT THIN FILM
摘要 PURPOSE: A method for cleaning a PZT thin film is provided to exactly remove only damaged surface of the PZT thin film by slowing an etching speed depend on concentration of HF solution. CONSTITUTION: The method comprises the step of etching a surface of a PZT thin film(2) by dipping the PZT thin film(2) into an etching solution composed of BOE(buffered oxide etchant) such as HF and acetic acid. The acetic acid used for removing Pb components and the HF used for removing Ti and Zr components. To be slow etching speed (that is, increasing cleaning effect instead of etching effect), the etching solution further comprises an alcohol. The alcohol is a member selected from the group consisting of methanol, ethanol or propanol.
申请公布号 KR20000007792(A) 申请公布日期 2000.02.07
申请号 KR19980027305 申请日期 1998.07.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JOON GI;KIM, CHANG JEONG
分类号 H01L21/308;C09K13/08;C23F1/30;H01L21/02;H01L21/304;H01L21/311;H01L21/316;H01L21/3213;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/304 主分类号 H01L21/308
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