发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING CAPACITOR FORMED UNDER BONDING PAD |
摘要 |
<p>PURPOSE: A semiconductor integrated circuit device is provided to reduce a chip area by forming a high capacitance capacitor or a plurality of a low capacitance capacitors and arranging power supply and ground rails under bonding pads. CONSTITUTION: The device comprises a semiconductor substrate having a main surface; a region having a plurality of bonding pads formed on the main surface; a first wiring layer arranged between the main surface and the pads and extended along the region; a second wiring layer, arranged between the main surface and the first wiring layer and along the region; and an insulating layer formed between the first and the second wiring layers and contacted with the layers.</p> |
申请公布号 |
KR20000008644(A) |
申请公布日期 |
2000.02.07 |
申请号 |
KR19980028558 |
申请日期 |
1998.07.15 |
申请人 |
SAMSUNG ELECTRONICS CO, LTD. |
发明人 |
LEE, SANG HEON;KIM, JANG HONG |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/822;H01L23/48;H01L23/485;H01L23/522;H01L27/04;H01L29/94;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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