FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of fabricating a semiconductor device is provided to simplify process steps by excluding a photolithography process for forming a first well isolation region in a triple well forming method. CONSTITUTION: The method comprises the steps of forming a first mask on a first conductive semiconductor substrate to define a first well region; implanting a second conductive impurity ion onto the semiconductor substrate with a large tilt angle ion implanting technique using the first mask to form a first well isolation when the semiconductor substrate reaches a position having a predetermined orient angle during revolution to 360 degree; implanting a first conductive impurity ion reusing the first mask to form a first well to be overlaid on a part of the first well isolation region; implanting a first conductive impurity ion using a second mask for defining the third well region to form a second well at a short distance from the first well; and implanting a second conductive impurity into the semiconductor substrate at both sides of the first and the second wells using a third mask for forming the third well region to form a third well surrounding both sidewalls of the first well.