发明名称 METHOD OF FORMING VIA CONTACT OF ANCHOR SHAPE
摘要 PURPOSE: A method of forming via contact is provided to prevent lifting of contact plug caused by the process of CMP or cleaning. CONSTITUTION: The method of forming via contact comprises the steps of forming conduction line layer on a wafer, forming barrier layer on the conduction line layer, forming conduction line and barrier line pattern by patterning, forming inter metal dielectric layer to cover the wafer including the conduction line and barrier line, forming via hole revealing a part of the barrier line pattern by an isotrophic etching and forming anchor hole extended to the inner part of the revealed barrier line pattern to form a wider pattern by isotrophic etching to the revealed barrier line pattern.
申请公布号 KR20000008543(A) 申请公布日期 2000.02.07
申请号 KR19980028414 申请日期 1998.07.14
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 LEE, KWANG EUK;JEONG, SEUNG PIL
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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