发明名称 METHOD OF FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A wiring method is provided to form a conductive layer pattern for required wiring by attaining a photoresist layer pattern satisfying both a low step region and a high step region. CONSTITUTION: The method comprises the steps of sequentially forming an insulating layer and a conductive layer on a semiconductor substrate; forming a photoresist layer on the conductive layer; patterning the photoresist layer using a mask of which a mask pattern is relatively greater than a conductive layer pattern requiring to be formed on the semiconductor substrate in the high step region; and etching the conductive layer using the photoresist pattern as a mask to form a conductive pattern having a required size on the low and high step regions.
申请公布号 KR20000007539(A) 申请公布日期 2000.02.07
申请号 KR19980026917 申请日期 1998.07.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, JONG CHAN
分类号 G03F1/14;H01L21/027;H01L21/28;H01L21/3213;H01L21/768 主分类号 G03F1/14
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