发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A wiring method is provided to form a conductive layer pattern for required wiring by attaining a photoresist layer pattern satisfying both a low step region and a high step region. CONSTITUTION: The method comprises the steps of sequentially forming an insulating layer and a conductive layer on a semiconductor substrate; forming a photoresist layer on the conductive layer; patterning the photoresist layer using a mask of which a mask pattern is relatively greater than a conductive layer pattern requiring to be formed on the semiconductor substrate in the high step region; and etching the conductive layer using the photoresist pattern as a mask to form a conductive pattern having a required size on the low and high step regions. |
申请公布号 |
KR20000007539(A) |
申请公布日期 |
2000.02.07 |
申请号 |
KR19980026917 |
申请日期 |
1998.07.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN, JONG CHAN |
分类号 |
G03F1/14;H01L21/027;H01L21/28;H01L21/3213;H01L21/768 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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