FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of fabricating a semiconductor device having a dual gate is provided to prevent impurity ions from trespassing upon a p+ polysilicon gate and sufficiently activate the impurity ions. CONSTITUTION: The method comprises the steps of forming a gate insulating layer and a polysilicon layer on a semiconductor substrate; patterning the polysilicon layer and the gate insulating layer to form a gate; successively implanting a first and a second p-type impurity ions into the exposed substrate at the gate and both sides of the gate; and annealing a substrate of the above structure using a rapid thermal process to form a p-type gate and a source/drain.