METHOD FOR MANUFACTURING METAL DIELECTRIC SLURRY FOR CMP OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A metal dielectric slurry fabrication method used for CMP(chemical mechanical polishing) is provided to reduce a micro-scratch and improve a polishing speed by using improved dispersion method. CONSTITUTION: The method comprises the steps of mixing a metal dielectric of 1-50 weight percents and a water of 50-99 weight percents in a premixing tank(1); transferring the mixed slurry to a transform pump(2); pressurizing the resultants in a high pressure pump(3) and accelerating to 100 meter per second; and dispersing the accelerated slurry into a dispersion chamber(4) having two orifice(6) and dispersing, thereby easily forming a dense and uniform metal dielectric slurry.