SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor memory device is provided to prevent a bridge between storage electrodes by forming a conductive layer for a storage electrode to be thinner than a barrier film. CONSTITUTION: The device comprises a semiconductor substrate; an insulating layer electrically connected to the semiconductor substrate; a plug penetrating the insulating layer to be electrically connected to the semiconductor substrate; a first barrier film for a storage electrode formed on the plug and the insulating layer; a first conductive layer for a storage electrode formed on the first barrier film; a second barrier film formed on the first conductive layer; a thin second conductive layer formed on the second barrier film; a barrier metal spacer formed on both sidewalls of the second conductive layer, the second barrier film, the first conductive layer, and the first barrier film; a conductive layer spacer formed on both sidewalls of the barrier metal spacer.