发明名称 |
METHOD OF FABRICATING THERMAL DETECTOR DEVICE |
摘要 |
PURPOSE: The method of fabricating a thermal detector device is provided to reduce the product cost by substituting a light detector device for a thermal detector device. CONSTITUTION: The method of fabricating the a thermal detector device is comprising the steps of; forming a first home in dielectric layer by etching method; filling an etch stopper in the first home; forming a first electrode, an infrared-absorbing layer and a semipermeability layer on the front plane of the dielectric layer; forming a second home connected in one body with the first home by etching back plane of the dielectric layer; removing the etch-stopper in the first home; forming a second electrode only on the back plane of the dielectric layer selectively; preparing a semiconductor chip having mesa-shaped isolation insulating layer; forming a metal line extending the upper plane, the side plane and the predetermined region of the isolation insulating layer; flip-chip bonding between the metal line and the second electrode by using an indium bump as mediation material.
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申请公布号 |
KR20000007482(A) |
申请公布日期 |
2000.02.07 |
申请号 |
KR19980026850 |
申请日期 |
1998.07.03 |
申请人 |
KOREA ELECTRONICS CO., LTD. |
发明人 |
HAN, MYEONG SU;KIM, TAE HUN;JEONG, MIN SEOK;HAN, SEOK RYONG |
分类号 |
H01L27/14;(IPC1-7):H01L27/14 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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