发明名称 METHOD OF FORMING CONTACT IN SEMICONDUCTOR DEVICE AND STRUCTURE OF CONTACT
摘要 PURPOSE: A method of forming contact is provided to prevent of forming bridge between the closing upper conduction line caused by the decrease of space margin. CONSTITUTION: In the method of forming contact, the recessed contact plug is formed by partial filling of contact hole by conducting material. In the remained contact hole, the side wall of the hole is covered with spacer and the hole narrowed. On the spacer and the recessed contact plug, a conduction layer is deposited and the reminder of contact plug is formed. The contact spacer has selectivity for etching with contact plug material. By the formation of spacer, the size of aperture for contact hole is decreased and the misalign margin for conduction line and contact plug increase. In the method, the step of etching back may be involved before the step of depositing the conduction layer to make the spacer width of upper part equal to the spacer width of lower part.
申请公布号 KR20000008175(A) 申请公布日期 2000.02.07
申请号 KR19980027888 申请日期 1998.07.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEONG, IN KWAN
分类号 H01L21/28;H01L21/768;(IPC1-7):H01L21/28 主分类号 H01L21/28
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