发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND DATA READ METHOD |
摘要 |
PURPOSE: A semiconductor memory device is provided to perform a two cycle pipeline operation without an error in response to a high and a low frequency. CONSTITUTION: The semiconductor memory device comprises: a sense amplifier unit(20) for amplifying data read from a memory cell array in response to a sense amplification enable signal to generate a sense output signal pair; and a data output buffer(22) for buffering and outputting the sense output signal pair, wherein the data output buffer comprises a level shifter(60) for generating a first data output signal pair, a register(62) for generating a second data output signal pair, a first transfer and latch part(64) for transferring the second data output signal pair to generate a third data output signal pair, a second transfer and latch part(66) for transferring the data output signal pair to generate a fourth data output signal pair, a first inversion part(72) for inverting the third data output signal pair to generate a fifth data output signal pair, a second inversion part(74) for inverting the fourth data output signal pair to generate the fifth data output signal pair, and a logic multiplication part(78) for logically multiplying fifth data output signals of the pair in response to a data output enable signal.
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申请公布号 |
KR20000008508(A) |
申请公布日期 |
2000.02.07 |
申请号 |
KR19980028352 |
申请日期 |
1998.07.14 |
申请人 |
SAMSUNG ELECTRONICS CO, LTD. |
发明人 |
JUNG, MIN CHEOL;KIM, KYUNG RAE |
分类号 |
G11C11/413;G11C7/10;G11C11/407;G11C11/409;G11C16/02;(IPC1-7):G11C11/409 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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