METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating capacitor is provided to increase capacitance by increasing surface area of a storage node electrode. CONSTITUTION: The method comprises the steps of: forming a contact hole by etching a insulating film and a portion of a substrate; forming a photoresist film in the contact hole; forming a photoresist film with a side wall of a wave shape by photolithography; forming a silicon oxide covering the photoresist film; forming a silicon oxide spacer at the side wall of the photoresist film; removing the photoresist film; forming a storage node electrode in the contact hole between the spacer; and completing the storage node electrode with the shape of a wave by removing the spacer. The another method comprises the additive step of forming a trench in a portion of the storage node electrode.