METHOD FOR FORMING NONVOLATILE MEMORY DEVICE USING A NANO CRYSTAL

摘要

PURPOSE: A nonvolatile memory formation method using a nano crystal is provided to uniformly and exactly form fine nano crystal and improve a reproducibility by using increase of etching ratio and oxidant ratio at grain boundary. CONSTITUTION: The method comprises the steps of forming a tunneling insulator(204) and an amorphous silicon layer(206) on a silicon substrate(202); transforming the amorphous silicon layer to a polycrystalline silicon layer(210); etching the polycrystalline silicon layer(210) using seco or light etching, thereby forming uniform nano crystal(212) having a high density due to increase of etching ratio at grain boundary(211) of the polycrystalline silicon; forming an interlayer dielectric(214) on the nano crystal(212); and forming a gate(216) on the interlayer dielectric.