METHOD OF FORMING VIA CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: Method of forming via contact of semiconductor device is provided to prevent dishing and erosion and to improve a characteristic of semiconductor device. CONSTITUTION: The method of forming via contact of semiconductor device comprises the steps of: forming a via contact hole exposing a first metal interconnect; forming a etch stop layer; forming a metal layer overall; etching the metal layer to form a contact plug using chemical mechanical polishing until the etch stop layer is exposed; etching the etch stop layer overall to form a spacer on step coverage of interlevel dielectric layer. As a result, a failure of the contact plug and a short of the first metal interconnect are prevented, and electric characteristic of device is increased.