METHOD FOR FORMING POLY-LAYER WIRING OF SEMICONDUCTOR DEVICE USING SUPERCONDUCTOR MATERIAL

摘要

PURPOSE: A fabricating method of a semiconductor device having a poly-layer wiring structure is provided to perform a poly-layer wiring process composed of super conductive material by the only thin film deposition/photosensitive patterning/ion implanting processes. CONSTITUTION: The method comprises the steps of forming a contact electrode electrically contacted with a semiconductor device in a lower interlayer insulating film for electrically insulating an interlayer structure; forming a first super conductive layer having a nonconducting characteristic, of which an electric characteristic becomes super conductive or nonconductive according to a containing amount of oxygen in an overall surface of the interlayer insulating film in which a surface of the contact electrode is exposed; selectively doping the oxygen on only a first super conductive layer at a portion connected to the contact electrode to form an oxygen-doped region as a lower metal wiring and the other region as an interlayer insulating film; forming a second super conductive layer having a nonconductive characteristic on the lower metal wiring and an overall top surface of the interlayer insulating film; selectively doping the oxygen on the second super conductive layer being a contact region for connecting the lower metal wiring to an upper metal wiring formed in the following process to form an oxygen-doped region as a plug and the other region as an interlayer insulating film; forming a third super conductive having a nonconductive characteristic on the plug and an overall surface of the interlayer insulating film; and selectively doping the oxygen on the only third super conductive layer being a region for connecting the plug to the lower wiring to form an oxygen-doped region as an upper metal wiring and the other region as an interlayer insulating film.