| 摘要 |
PURPOSE: A self alignment contact forming method of semiconductor device is provided to prevent leakage current between a gate electrode and contract pad. CONSTITUTION: The method comprises the steps of: forming gate oxide layer, gate electrode layer, first gate mask layer, second gate mask layer on semiconductor substrate having device isolation layer, forming gate structures by etching the second gate mask layer, the first gate mask layer and the gate electrode layer sequentially, forming gate spacer both side wells of the gate structures, respectively, forming layer insulation layer on all of the substrate and forming self alignment contact hole by etching the layer insulation layer until upper surface of the semiconductor substrate between the gate spacer is exposed using self alignment contact mask pattern wherein a etching selection ratio of the second gate mask layer is higher than that of the first gate mask layer.
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