METHOD OF FILLING VIA CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of filling via contact is provided to prevent the forming of void. CONSTITUTION: The method of filling via contact comprises the steps of forming via contact hole in a dielectric layer formed on wafer, forming metal layer on the wafer including the via contact hole, doing reflow process with the wafer having the metal layer, annealing the wafer after the reflow process. The metal layer usually is aluminium layer and the temperature of annealing lies in the range of 650-670 Celsius degree to rid void formed in the via contact hole.