CAPACITOR AND FABRICATING METHOD OF THE SAME

摘要

PURPOSE: A method of fabricating a capacitor is provided to increase an effective area and capacitance by forming a hemispherical grain in a cylindrical capacitor and on a top surface thereof. CONSTITUTION: The method comprises the steps of etching a first insulating layer formed on a semiconductor substrate to form a storage node contact hole; filling the storage node contact hole with conductive material to form a storage node contact plug; forming a second insulating layer on the first insulating layer and the storage node contact plug; partially etching the second insulating layer to form an opening exposing a top surface of the storage node contact plug and a part of the first insulating layer at both sides of the storage node contact plug; forming a polysilicon layer on the second insulating layer to partially fill the opening; forming a photoresist layer on the polysilicon layer to fill up the opening; plainly etching the polysilicon layer and the photoresist layer at both sides of the opening down to a top surface of the second insulating layer; removing the photoresist layer in the opening; forming a hemispherical grain polysilicon layer on an internal surface and a top surface of the storage node; and removing the second insulating layer at both sides of the storage node down to a top surface of the first insulating layer.