REMOVING METHOD OF PHOTORESIST PATTERN

摘要

PURPOSE: A method of removing a photoresist pattern is provided to easily remove a photoresist layer without damage of a semiconductor substrate. CONSTITUTION: The method comprises the steps of removing a photoresist pattern to expose an ion-implanting region on a top of an ion-implanting layer; implanting impurity ions into the photoresist pattern and the exposed layer; removing the photoresist pattern, wherein the removing method comprises the steps of applying a first oxygen plasma treatment to a photoresist pattern; removing by-products created by reaction of oxygen made from the oxygen plasma and ion-implanting impurities using deionized water; and applying a second oxygen plasma treatment to the remaining photoresist pattern.