METHOD FRO MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A capacitor fabrication method is provided to improve a contact resistance by using heavily doped and lightly doped polysilicon layers as a storage electrode. CONSTITUTION: The method comprises the steps of forming an insulating pattern(42) having contact holes(44) for storage node on a semiconductor substrate(30) having transistors; forming a heavily doped polysilicon layer(46) to fill the contact holes(44); and forming a lightly doped polysilicon layer(48) on the resultant structure; annealing the resultant structure using PH3 doping gas so as to diffuse the doping gas of the heavily doped polysilicon layer(46) into the contact hole(44), thereby decreasing the contact resistance of the contact hole(44); and growing HSG(hemi-spherical grain) layer(50) on the surface of the lightly doped polysilicon layer(48).