SEMICONDUCTOR DEVICE

摘要

PURPOSE: A guard ring is provided to improve reliability of a semiconductor device by preventing damage of an adjacent circuit caused by oxidation of tungsten. CONSTITUTION: The ring comprises a substrate; a first insulating layer formed on the substrate with a contact hole; a node contact layer formed in the middle of the contact hole; a cylindrical first conductive layer formed on a sidewall of a contact hole at both sides of the node contact layer and on the first insulating layer adjacent to the sidewall; a second conductive layer formed on the first insulating layer including the first conductive layer and on the node contact hole with an insulating layer interposed therebetween; a second insulating layer formed on the second conductive layer with a contact hole; a via contact hole formed in the contact hole; and a third conductive layer, coupled to the via contact hole, formed on the second insulating layer.