发明名称 |
METHOD FOR DOUBLE-SIDED PATTERNING OF HIGH TEMPERATURE SUPERCONDUCTING CIRCUITS |
摘要 |
In a process for patterning both sides of a double-sided HTS thin film wafer with the patterns in close registration, the first side is patterned with at least one reference mark and the second side is patterned with at least one aperture which permits alignment of the reference mark from the already applied pattern on the first side preferably to a similar reference mark on the yet to be applied pattern on the second side, such that the patterns can be aligned in close registration, using microscopic viewing techniques if necessary.
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申请公布号 |
WO0005770(A1) |
申请公布日期 |
2000.02.03 |
申请号 |
WO1999US15932 |
申请日期 |
1999.07.14 |
申请人 |
E.I DU PONT DE NEMOURS AND COMPANY;PANG, PHILIP, SHEK, WAH |
发明人 |
PANG, PHILIP, SHEK, WAH |
分类号 |
G03F7/20;H01L21/027;H01L39/24;(IPC1-7):H01L39/24 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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